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5Results for 'Hijzen, E.A.'Results 1 - 5
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  1. 1
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    New silicon drift detector design for diminishing lateral diffusion
    by Hijzen, E.A., Schooneveld, E.M., van Eijk, C.W.E., Hollander, R.W.
    Published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (1993)
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  2. 2
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    Study of the position-sensitive detection of X-rays with a silicon drift chamber
    by Schooneveld, E.M., van Eijk, C.W.E., Hollander, R.W., Hijzen, E.A.
    Published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (1993)
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  3. 3
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    Improved method for determining inversion layer mobility of electrons in trench MOSFETs
    by van den Heuvel, M.G.L., Hueting, R.J.E., Hijzen, E.A., in ‘t Zandt, M.A.A.
    Published in IEE Proceedings - Circuits, Devices and Systems (2004)
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  4. 4
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    Record low specific on-resistance for low-voltage trench MOSFETs
    by in't Zandt, M.A.A., Hijzen, E.A., Hueting, R.J.E., Koops, G.E.J.
    Published in IEE Proceedings - Circuits, Devices and Systems (2004)
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  5. 5
    online resource
    A novel silicon drift detector with two dimensional drift time measurement
    by Hijzen, E.A., Schooneveld, E.M., van Eijk, C.W.E., Hollander, R.W., Sarro, P.M., van den Bogaard, A.
    Published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (1994)
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