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Growth by molecular beam epitaxy of thick films of InxGa1-xAs (x ∼ 0.53) on Si(100) substrates

Bibliographic Details
Journal Title: Journal of Crystal Growth
Authors and Corporations: Westwood, D.I., Woolf, D.A., Clark, S.A.
In: Journal of Crystal Growth, 114, 1991, 3, p. 346-350
Type of Resource: E-Article
Language: English
published:
Elsevier BV
Subjects: